Faculty Information

Specialization and related fields

Business career

Belonging society

Official position and committee in Univ.

Book and thesis

Lecturer and lecture

Academic conference presentation

（Last updated : 2024-04-01 19:22:14）

KOH Shinji
Department Aoyama Gakuin University Department of Electrical Engineering and Electronics, College of Science and Engineering

Position Professor

■ Specialization and related fields

Electric and electronic materials, Applied physical properties, Crystal engineering

■ Business career

1.	2013/04～2018/03	Aoyama Gakuin University College of Science and Engineering Department of Electrical Engineering and Electronics Associate Professor
2.	2018/04～	Aoyama Gakuin University College of Science and Engineering Department of Electrical Engineering and Electronics Professor

■ Belonging society

1.	1996/06～	Japan Society of Applied Physics
2.	2011/09～2015/03	The Laser Society of Japan
3.	2011/10～2012/03	∟ program committee
4.	2013/04～2014/03	∟ program committee

■ Official position and committee in Univ.

1.	2020/04/01～2021/03/31	Aoyama Gakuin University Curriculum Coordinator
2.	2020/04/01～2022/03/31	Aoyama Gakuin University Director, Project Reserch Institute
3.	2018/06/01～2020/03/31	Aoyama Gakuin University Director, Project Reserch Institute
4.	2021/04/01～2023/03/31	Aoyama Gakuin University Chair
5.	2022/04/01～2024/03/31	Aoyama Gakuin University Director, Project Reserch Institute
6.	2024/04/01～2026/03/31	Aoyama Gakuin University Dean of The College of Science and Engineering
7.	2024/04/01～2026/03/31	Aoyama Gakuin University Dean of the Graduate School of Science and Engineering
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■ Book and thesis

1.	Article	Evaluation of impedance characteristics of CVD-grown graphene and effect of tuning electrical properties of graphene up to 50 GHz scientific Reports 13,pp.13878 (Collaboration) 2023/08
2.	Article	Soft x-ray photoelectron momentum microscope for multimodal valence band stereography Review of Scientific Instrument 94,pp.083701 (Collaboration) 2023/08
3.	Article	Graphene transparent antennas Carbon Reports 2,pp.23-30 (Collaboration) 2023/03
4.	Article	Polydopamine-assisted dip-and-dry fabrication of highly conductive cotton fabrics using single-wall carbon nanotubes inks for flexible devices Cellulose 30,pp.1971-1980 (Collaboration) 2022/12
5.	Article	Characterization of Epitaxial CVD Graphene on Ir(111)/α-Al2O3(0001) by Photoelectron Momentum Microscopy Japanese Journal of Applied Physics 61,pp.SD1015 (Collaboration) 2022/06
6.	Article	Single-layer graphene as a transparent electrode for electrogenerated chemiluminescence biosensing Electrochemistry Communications (Collaboration) 2022/05
7.	Article	Luminescence properties of Tm2O3-doped germanate glass phosphors for near-infrared wideband light-source Journal of Materials Science: Materials in Electronics 32,pp.14813-14822 (Collaboration) 2021/05
8.	Article	Optically transparent antenna based on carrier-doped three-layer stacked graphene AIP-Advance 11,pp.035136 (Collaboration) 2021/03
9.	Article	Characterization of contact properties at interface between metal and graphene up to 15 GHz Engineering Reports (Collaboration) 2020/11
10.	Article	"Luminescence properties of PrF3-doped Sb2O3-ZnO-GeO2 glass phosphors for near-infrared wideband light-source Journal of Materials Science: Materials in Electronics 31,pp.20824-20832 (Collaboration) 2020/10
11.	Article	Reusability of Ir(111)/α-Al₂O₃(0001) substrates in graphene chemical vapor deposition growth Japanese Journal of Applied Physics 59,pp.SIID01-SIID01 (Collaboration) 2020/06
12.	Article	Characterization of graphene grown by direct-liquid-injection chemical vapor deposition with cyclohexane precursor in N2 ambient Diamond and Related Materials pp.107710 (Collaboration) 2020/04
13.	Article	Electrochemical characterization of CVD-grown graphene for designing electrode/biomolecule interface Crystals 10,pp.241 (Collaboration) 2020/03
14.	Article	Radiation properties of graphene-based optically transparent dipole antenna Microwave and Optical Technology Letters 60,pp.2992-2998 (Collaboration) 2018/12
15.	Article	Making graphene luminescent by adsorption of an amphiphilic europium complex Applied Physics Letters 112,pp.173103-1-173103-4 (Collaboration) 2018/04
16.	Article	Graphene-Based Optically Transparent Dipole Antenna Applied Physics Letters 110,pp.233102-1-233102-3 (Collaboration) 2017/05
17.	Article	Epitaxial growth and electrochemical transfer of graphene on Ir(111)/alpha-Al2O3(0001) substrates pp.023105 (Collaboration) 2016/07
18.	Article	Hierarchical Silver Nanoparticle Micro-Clustering in Poly(methyl methacrylate) Matrix in Spin-Coatable Electrically Conductive Thermoplastics Science of Advanced Materials 5,pp.1546-1555 (Collaboration) 2013/11
19.	Article	Characterizing Edge and Stacking Structures of Exfoliated Graphene by Photoelectron Diffraction Japanese Journal of Applied Physics pp.110110 (Collaboration) 2013/10
20.	Article	Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene Applied Physics Letters 103,pp.063107 (Collaboration) 2013/08
21.	Article	Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE Journal of Crystal Growth 364,pp.95 (Collaboration) 2013/02
22.	Article	Circularly polarized lasing over wide wavelength range in spin-controlled (110) vertical-cavity surface-emitting laser Solid State Commun. pp.1518 (Collaboration) 2012/08
23.	Article	Highly Flexible, Transparent and Electrically Conducting Silver Nanoparticles Films Enabled by Controlled Sedimentation MRS Proceedings 1436,pp.k08-35 (Collaboration) 2012/08
24.	Article	All-Optical Flip-Flop Operation at 1-mA Bias Current in Polarization Bistable Vertical-Surface Emitting Lasers with An Oxide Confinement Structure IEEE Photonics Technology Letters pp.1811 (Collaboration) 2011/11
25.	Article	Correlation between Morphology and Electron Spin relaxation Time in GaAs/AlGaAs Quantum Wells on Slightly Misoriented GaAs(110) substrates Journal of Applied Physics pp.043516 (Collaboration) 2011/08
26.	Article	Room Temperature Circularly Polarized Lasing in an optically spin injected vertical-cavity surface-emitting laser with (110) GaAs quantum wells Applied Physics Letters pp.081113 (Collaboration) 2011/02
27.	Article	Carrier Lifetime and Electron Spin Relaxation Time in (110)-oriented GaAs/AlGaAs Quantum Well Micro-posts IEEE Photonics Technology Letters pp.1689 (Collaboration) 2010/11
28.	Article	Room Temperature Gate Modulation of Electron Spin Relaxation Time in (110)-Oriented GaAs/AlGaAs Quantum Wells Applied Physics Letters pp.202102 (Collaboration) 2010/11
29.	Article	Electron Spin Relaxation Time in GaAs/AlGaAs Multiple Quantum Wells Grown on Slightly Misoriented GaAs(110) Substrates Applied Physics Letters pp.081111 (Collaboration) 2010/08
30.	Article	Switching of Lasing Circular Polarizations in a (110)-VCSEL IEEE Photonics Technology Letters 21,pp.1350 (Collaboration) 2009/09
31.	Article	Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection Applied Physics Letters 94,pp.131108 (Collaboration) 2009/04
32.	Article	Correlation between electron spin relaxation time and hetero-interface roughness in (110)-oriented GaAs/AlGaAs multiple-quantum wells Pysica E 41,pp.870 (Collaboration) 2009/03
33.	Article	The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method Journal of Electroceramics 20,pp.73 (Collaboration) 2008/10
34.	Article	Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy Japanese Journal of Applied Physics pp.4630 (Collaboration) 2008/06
35.	Article	Effect of an external electric field on the crystal growth process of YBCO superconductive oxide Journal of Crystal Growth 307,pp.432 (Collaboration) 2007/09
36.	Article	Partitioning of ionic species and crystallization electromotive force in the growth of LiNbO3 and Li2B4O7 Journal of Crystal Growth 306,pp.406 (Collaboration) 2007/08
37.	Article	Study of the mechanism of crystallization electromotive force during growth of congruent LiNbO3 using a micro-pulling-down method Journal of Crystal Growth 297,pp.247 (Collaboration) 2006/12
38.	Article	In situ observation of crystal growth process of YBCO superconductive oxide with an external electric field Journal of Crystal Growth 294,pp.420-426 (Collaboration) 2006/09
39.	Article	Determination of lattice parameters of SiGe/Si(110) heterostructures Thin Solid Films 508,pp.132-135 (Collaboration) 2006/06
40.	Article	The electric field-induced transformation of the melting state of langasite from incongruent into congruent Journal of Crystal Growth 292,pp.1-4 (Collaboration) 2006/06
41.	Article	Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping Material Science in Semiconductor Processing 9,pp.257-260 (Collaboration) 2006/02
42.	Article	Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Gex surfaces Journal of Applied Physics 98,pp.023503 (Collaboration) 2005/07
43.	Article	Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite Journal of Crystal Growth 281,pp.481-491 (Collaboration) 2005/06
44.	Article	Reaction at the interface between Si melt and a Ba-doped silica crucible Journal of Crystal Growth 277,pp.154-161 (Collaboration) 2005/03
45.	Article	Temperature dependence of transport properties of high mobility holes in Ge quantum wells Journal of Applied Physics 97,pp.083701 (Collaboration) 2005/03
46.	Article	Changes in elastic deformation of strained Si by microfabrication Materials Science in Semiconductor Processing 8,pp.181-185 (Collaboration) 2005/02
47.	Article	High-performance SiGe heterostructure FET grown on silicon-on-insulator Materials Science in Semiconductor Processing 8,pp.367-370 (Collaboration) 2005/02
48.	Article	Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures Materials Science in Semiconductor Processing 8,pp.177-180 (Collaboration) 2005/02
49.	Article	Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates Material Science in Semiconductor Processing 7,pp.289-292 (Collaboration) 2004/10
50.	Article	Strain relaxation and induced defects in SiGe thin films grown on ion- implanted Si substrates Material Transactions 45,pp.2644-2646 (Collaboration) 2004/08
51.	Article	Fabrication of high-quality strain-relaxed thin SiGe layers by ion- implanted Si substrates Applied Physics Letters 85,pp.2514-2516 (Collaboration) 2004/07
52.	Article	Influences of delta-doping position on the characteristics of SiGe-Si DCFETs IEEE Electron Device Letters 25,pp.477-479 (Collaboration) 2004/06
53.	Article	Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions Physica E 21,pp.308-311 (Collaboration) 2004/03
54.	Article	Formation of thin SiGe virtual substrates by ion implantation into Si substrates applied Surface Science 224,pp.99-103 (Collaboration) 2004/03
55.	Article	Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si Physica E 21,pp.440-444 (Collaboration) 2004/03
56.	Article	Magneto-photoluminescence studies of AlInAs/AlGaAs self-assembled quantum dots with type-II band alignment Journal of the Physical Society of Japan 73,pp.480-484 (Collaboration) 2004/02
57.	Article	Observation of band alignment transition from type-I to type-II in AlInAs/AlGaAs self-assembled quantum dots Journal of the Physical Society of Japan 72,pp.3271-3275 (Collaboration) 2003/12
58.	Article	P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor Japanese Journal of Applied Physics 42,pp.L1422-L1424 (Collaboration) 2003/12
59.	Article	Characterization of amorphous-Si/1ML-Ge/Si(001) interface structure by X-ray standing waves Japanese Journal of Applied Physics 42,pp.7050-7052 (Collaboration) 2003/11
60.	Article	In-plane strain fluctuation in strained-Si/SiGe heterostructures Applied Physics Letters 83,pp.4339-4341 (Collaboration) 2003/11
61.	Article	Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates Japanese Journal of Applied Physics 42,pp.L735-L737 (Collaboration) 2003/07
62.	Article	Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves Japanese Journal of Applied Physics 42,pp.2582-2586 (Collaboration) 2003/05
63.	Article	Surface Planarization of Strain-Relaxed SiGe Buffer Layers by CMP and Post Cleaning Journal of Electrochemical Society 150,pp.G376-G379 (Collaboration) 2003/05
64.	Article	Growth of SiGe/Ge/SiGe Heterostructures With Ultrahigh Hole Mobility and their Device Application Journal of Crsytal Growth 251,pp.670-675 (Collaboration) 2003/04
65.	Article	Hole Transport Properties of B-Doped Relaxed SiGe Epitaxial Films Grown by Molecular Beam Epitaxy Journal of Crystal Growth 251,pp.689-692 (Collaboration) 2003/04
66.	Article	Planarization of SiGe Virtual Substrates by CMP and its Application to Strained Si Modulation-Doped Structures Journal of Crystal Growth 251,pp.693-696 (Collaboration) 2003/04
67.	Article	Relaxation Enhancement of SiGe Thin Layers by Ion Implantation into Si Substrates Journal of Crystal Growth 251,pp.685-688 (Collaboration) 2003/04
68.	Article	Hole Density Dependence of Effective Mass, Mobility and Transport Time in Strained Ge Channel Modulation-Doped Heterostructures Applied Physics Letters 82,pp.1425-1427 (Collaboration) 2003/02
69.	Article	SiGe Heterostructures Field-Effect Transistors Using V-Shaped Confining Potential Well IEEE Electron Device Letters 24,pp.69-71 (Collaboration) 2003/02
70.	Article	Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction Japanese Journal of Applied Physics 42,pp.L189-L191 (Collaboration) 2003/02
71.	Article	P-type Delta-Doped SiGe/Si Heterostructure Field Effect Transistors Electronics Letters 38,pp.1289-1291 (Collaboration) 2002/12
72.	Article	A Novel Triple Delta-Doped SiGe Heterostructure Field-Effect Transistor Japanese Journal of Applied Physics 41,pp.L1212-L1215 (Collaboration) 2002/11
73.	Article	Optical Properties of Strain-Balanced SiGe Planar Microcavities with Ge Dots on Si Substrates Applied Physics Letters 81,pp.817-820 (Collaboration) 2002/07
74.	Article	Ultrahigh Room-Temperature Hole Hall and Effective Mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 Heterostructures Applied Physics Letters 81,pp.847 (Collaboration) 2002/07
75.	Article	Extremely High Room-Temperature Two-Dimensional Hole Gas Mobility in Ge/Si0.33Ge0.67/Si(001) p-type Modulation-Doped Heterostructures Applied Physics Letters 80,pp.3117-3119 (Collaboration) 2002/04
76.	Article	Optical Properties of Strain-Balanced Si0.73Ge0.27 Planar Microcavities on Si Substrates Japanese Journal of Applied Physics 41,pp.2664-2667 (Collaboration) 2002/04
77.	Article	Fabrication of Strain-Balanced Si0.73Ge0.27/Si Distributed Bragg Reflectors on Si Substrates for Optical Device Applications Physica E 13,pp.1051-1054 (Collaboration) 2002/03
78.	Article	Mobility Enhancement in Strained Si Modulation-Doped Structures by Chemical Mechanical Polishing Applied Physics Letters 82,pp.412-414 (Collaboration) 2002/01
79.	Article	Size Reduction of the Ge Islands by Utilizing the Strain Fields from the Lower-Temperature-Grown Hut-Clusters Buried in the Si Matrix Materials Science & Engineering B 89,pp.58-61 (Collaboration) 2002/01
80.	Article	Surface Smoothing of SiGe Strain-Relaxed Buffer Layers by Chemical Mechanical Polishing Materials Science & Engineering B 89,pp.406-409 (Collaboration) 2002/01
81.	Article	Fabrication of Strain-Balanced Si0.73Ge0.27/Si Distributed Bragg Reflectors on Si Substrates Applied Physics Letters 79,pp.476-479 (Collaboration) 2001/07
82.	Article	Molecular Beam Epitaxy of GaAs on Nearly Lattice-Matched SiGe Substrates Grown by the Multicomponent Zone-Melting Method Semiconductor Science and Technology 16,pp.699-703 (Collaboration) 2001/07
83.	Article	GaAs/Ge/GaAs Sublattice Reversal Epitaxy and its Application to Nonlinear Optical Devices Journal of Crystal Growth 227-228,pp.183-192 (Collaboration) 2001/06
84.	Article	SiGe Bulk Crystal as a Lattice-Matched Substrate to GaAs for Solar Cell Applications Applied Physics Letters 77,pp.3565-3567 (Collaboration) 2000/11
85.	Article	Sublattice Reversal Epitaxy a Novel Technique for Fabricating Domain-Inverted Compound Semiconductor Structures Science and Technology of Advanced Materials 1,pp.173-179 (Collaboration) 2000/11
86.	Article	Study of Sublattice Inversion in GaAs/Ge/GaAs(001) Crystal by X-ray Diffraction Applied Surface Science 159-160,pp.256-259 (Collaboration) 2000/07
87.	Article	Characterization of Sublattice-Reversed GaAs by Reflection High Energy Electron Diffraction and Transmission Electron Microscopy Physica E 7,pp.876-880 (Collaboration) 2000/06
88.	Article	GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices Japanese Journal of Applied Physics 38,pp.L508-L511 (Collaboration) 1999/05
89.	Article	Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy Japanese Journal of Appleid Physics 37,pp.L1493-L1496 (Collaboration) 1998/12
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■ Lecturer and lecture

1.	2023/04/22	CVD Graphene-Based Optically Transparent Antennas
2.	2021/03/28	Device applications of graphene

■ Academic conference presentation

1.	2023/07/03	Characterization of Impedance and Physical Properties of CVD-grown Graphene up to 50 GHz (PhotonIcs and Electromagnetics Research Symposium (PIERS2023))
2.	2022/12/01	Printed Quarter-Wavelength Absorber Using Carbon Nanotube Ink (2022 Asia-Pacific Microwave Conference (APMC2022))
3.	2022/12/01	Single-Wall Carbon Nanotube-Based Flexible Monopole Antenna Fabricated Using Poly (Methyl Methacrylate)-Supported Transfer Technique (2022 Asia-Pacific Microwave Conference (APMC2022))
4.	2022/10/19	Imaging single-crystal domains of CVD graphene on Ir(111)/alpha-Al2O3 (0001) by photoelectron momentum microscopy (14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22 (ALC'22))
5.	2022/06/08	Fabrication of Single-Wall Carbon Nanotube Monopole Antenna Using Poly (methyl methacrylate)-Supported Transfer Technique (the 15th International Conference on New Diamond and Nano Carbons (NDNC2022))
6.	2022/06/08	Polydopamine-Assisted Dip-and-Dry Fabrication of High Conductive Fabrics using Single-Wall Carbon Nanotube Inks (the 15th International Conference on New Diamond and Nano Carbons (NDNC2022))
7.	2021/12/18	Evaluation of electrochemiluminescence properties of graphene transparent electrodes for rapid and simple testing (2021 International chemical congress of pacific basin societies (PACIFICHEM 2021))
8.	2021/12/18	Improved electrochemiluminescence behavior of CVD-grown graphene electrode by UV/ozone treatmen (2021 International chemical congress of pacific basin societies (PACIFICHEM 2021))
9.	2021/12/18	Solution-gated graphene transistor with a graphene gate for highly sensitive free chlorine sensors (2021 International chemical congress of pacific basin societies (PACIFICHEM 2021))
10.	2021/10/26	Characterization of Epitaxial CVD Graphene on Ir(111)/α-Al2O3(0001) by Photoelectron Momentum Microscopy (34th International Microprocesses and Nanotechnology Conference (MNC2021))
11.	2020/01/29	Device applications of graphene prepared by chemical vapor deposition (NANOTECHNOLOGIES For 21th Century)
12.	2019/11/01	Contact Characteristics at the Interface between Metal and Graphene Up to 30 GHz (Smart City Symposium 2019)
13.	2019/10/31	Comparison between Mono- and Multi-Layer CVD-Grown Graphene Transparent Electrodes for Electrochemiluminescence Applications (32nd International Microprocesses and Nanotechnology Conference (MNC2019))
14.	2019/10/30	Electrochemical Characterization of CVD-Grown Graphene for MET Enzymatic Biofuel Cell Applications (32nd International Microprocesses and Nanotechnology Conference (MNC2019))
15.	2019/10/30	Study of The Reusability of Ir(111)/alpha-Al₂O₃(0001) Substrates in Graphene CVD Growth (32nd International Microprocesses and Nanotechnology Conference (MNC2019))
16.	2019/04/12	A Real-Time Free Chlorine Monitoring by Graphene Field-Effect Transistor (GFET) (The 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2019))
17.	2019/03/27	Graphene Growth on Cu Foil by Direct-Liquid-Injection Chemical Vapor Deposition with Cyclohexane Precursor in N2 Ambient (Graphene Korea 2019)
18.	2018/11/07	Radiation Characteristics of Optically Transparent Dipole Antenna Fabricated using CVD Monolayer Graphene (30th Asia-Pacific Microwave Conference (APMC 2018))
19.	2018/10/16	Optically transparent dipole antenna based on CVD monolayer graphene (The 6th International SmartCity Symposium 2018)
20.	2018/09/04	Monolayer Graphene as Transparent Electrode Materials for Electrochemiluminescence Applications (The 69th Annual Meeting of the International Society of Electrochemistry)
21.	2018/02/22	Monolayer Graphene as Electrode Materials for Electrochemiluminescence Application (Graphene and 2D Materials International Conference and Exhibition (Graphene for US 2018))
22.	2018/02/22	Study of correlation between electrochemical properties and density of states of graphene using field effect transistors (Graphene and 2D Materials International Conference and Exhibition (Graphene for US 2018))
23.	2018/02/22	Synthesis of luminescent graphene by adsorption of an amphiphilic Eu complex (Graphene and 2D Materials International Conference and Exhibition (Graphene for US 2018))
24.	2017/11/22	Microwave Radiation from Graphene-Based Optically Transparent Dipole Antenna (Progress In Electromagnetics Research Symposium (PIERS 2017))
25.	2016/11/08	Single Crystal Graphene Growth on Reusable Iridium/Sapphire Substrate (Graphene Malaysia 2016)
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