HARUYAMA Junji
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 1995
Type Academic Journal
Peer Review Peer reviewed
Title Impact Ionization in GaAs Metal-semiconducor Field effect-transistors with a Lightly Doped Drain Structure and an Al0.2Ga0.8As/GaAs Heterobuffer Layer
Contribution Type Collaboration
Journal Journal of Applied Physics
Journal TypeAnother Country
Volume, Issue, Page pp.3913
Author and coauthor J.Haruyama and H.Katano