ISHIKAWA Yasuaki
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 2018/05
Type Academic Journal
Peer Review Peer reviewed
Title Low Temperature Cured Poly-siloxane Passivation for Highly Reliable a-InGaZnO Thin-Film Transistors
Contribution Type Collaboration
Journal Appl. Phys. Lett.
Journal TypeAnother Country
Volume, Issue, Page 112,pp.213503-1-5
Author and coauthor Naofumi Yoshida, Juan Paolo Bermundo, Yasuaki Ishikawa, Toshiaki Nonaka, Katsuto Taniguchi, and Yukiharu Uraoka
DOI 10.1063/1.5029521