ISHIKAWA Yasuaki
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 2018/02
Type Academic Journal
Peer Review Peer reviewed
Title Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2O6 as Gate Insulator Deposited by Sputtering Method
Contribution Type Collaboration
Journal Physica status solidi A
Journal TypeAnother Country
Volume, Issue, Page 216,pp.1700773-1-5
Author and coauthor Takanori Takahashi, Takeshi Hoga, Ryoko Miyanaga, Kento Oikawa, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, and Kiyoshi Uchiyama
DOI 10.1002/pssa.201700773