ISHIKAWA Yasuaki
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 2017/04
Type Academic Journal
Peer Review Peer reviewed
Title Solution-derived SiO2 Gate Insulator Formed by CO2 Laser Annealing for Polycrystalline Silicon Thin-film Transistors
Contribution Type Collaboration
Journal Jpn. J. Appl. Phys.
Journal TypeAnother Country
Volume, Issue, Page 56,pp.056503-1-5
Author and coauthor Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, and Yasuaki Uraoka
DOI 10.7567/JJAP.56.056503