ISHIKAWA Yasuaki
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 2013/12
Type Academic Journal
Peer Review Peer reviewed
Title The influence of fluorinated silicon nitride gate insulator on positive bias stability toward highly reliable amorphous InGaZnO thin-film transistors
Contribution Type Collaboration
Journal ECS J. Solid State Sci. Technol.
Journal TypeAnother Country
Volume, Issue, Page 3(2),pp.Q20-Q23
Author and coauthor Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Yoshihiro Ueoka, Masaki Fujiwara, Eiji Takahashi, Yasunori Andoh, and Yukiharu Uraoka
DOI 10.1149/2.014402jss