ISHIKAWA Yasuaki
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 2019/07
Type Academic Journal
Peer Review Peer reviewed
Title Effective trapping reduction in SiO2/GaN MOS structure by high pressure water vapor annealing
Contribution Type Collaboration
Journal ECS J. Solid State Sci. Technol.
Journal TypeAnother Country
Volume, Issue, Page 8(8),pp.P388-391
Author and coauthor Tengda Lin, Mutsunori Uenuma, Masaaki Fururkawa, Juan Paolo Soria Bermundo, Yasuaki Ishikawa, and Yukiharu Uraoka
DOI 10.1149/2.0021908jss