ISHIKAWA Yasuaki
   Department   Aoyama Gakuin University  Department of Electrical Engineering and Electronics, College of Science and Engineering
   Position   Professor
Language English
Publication Date 2019/03
Type Academic Journal
Peer Review Peer reviewed
Title Physical and electrical properties of ALD-Al2O3/GaN MOS capacitor annealed with high pressure water vapor
Contribution Type Collaboration
Journal Jpn. J. Appl. Phys.
Journal TypeAnother Country
Volume, Issue, Page 58,pp.040902-1-6
Author and coauthor Yuta Fujimoto, Mutsunori Uenuma, Tsubasa Nakamura, Masaaki Furukawa, Yasuaki Ishikawa, and Yukiharu Uraoka
DOI 10.7567/1347-4065/ab09a2